Green Silicon Carbide (GC)

Overview

Green silicon carbide (green SiC, GC-grade) is the higher-purity grade of carborundum, synthesised under stricter Acheson-furnace control from high-purity quartz and petroleum coke, with sodium chloride added to the charge as a re-crystallisation promoter. The result is α-SiC with characteristic green colour (the colour comes from nitrogen incorporation during synthesis), SiC content ≥99.0%, and hardness slightly higher than black SiC at Mohs 9.2–9.3 and Knoop ~2500 HK. The 0.5% SiC-purity advantage and lower magnetic-Fe contamination make green SiC the abrasive of choice for any application where iron contamination matters or where premium grinding-wheel cutting performance is needed.

Supplied in F14–F220 particle-size sand (FEPA / ISO 8486-1 / GB/T 2481.2). Green SiC micropowder (F230–F2000) is treated separately on the SiC Micropowder page because it overlaps in production technology with the JIS overflow/siphon micropowder family.

Service to 1450°C in oxidising atmospheres, 1600°C in inert/reducing. RoHS / REACH / SVHC clean, non-toxic, non-hazardous.

Technical Specifications

Applications

Precision Grinding

Optical glass, hard alloy (tungsten carbide tool inserts), carbide circular-saw blades, jade and gemstone shaping and polishing. Green SiC F60–F320 in vitrified or resinoid bond. The lower Fe contamination and sharper crystal edges give cleaner ground surfaces than black SiC at equivalent grit.

Premium Vitrified-Bonded Grinding Wheels

Hardened tool steel (HRC 60+), high-speed steel (HSS), titanium alloys, ceramic substrates. Where black SiC would generate Fe contamination on the workpiece or fail to grind at adequate rate.

Wire-Saw Slurry for Semiconductor-Grade Silicon Wafer

Green SiC F600–F1200 in polyethylene-glycol carrier — slicing 8" and 12" polysilicon and monocrystalline silicon ingots for solar cells and semiconductor wafer manufacture. The semiconductor industry specifies magnetic Fe ≤0.05% to prevent ferromagnetic contamination of the wafer surface that would impair subsequent CMOS processing.

Sapphire and LED Substrate Polishing

Lapping and polishing slurry for sapphire (Al₂O₃) and LED epitaxy substrate wafers. Green SiC micropowder gives 0.1–0.3 μm finish before final CMP.

Stainless Steel and Titanium Polishing

Sandbelt and grinding-wheel polishing of stainless steel cookware, surgical tools, and architectural sheet — applications where Fe contamination from black SiC would cause surface rust. Green SiC also serves titanium polishing in aerospace.

Cermet and Hard-Alloy Refractory

Functional filler in cermet hot-pressed parts where ≥99% SiC purity is required.

High-End Cookware Coating

Some premium non-stick cookware brands specify green SiC micropowder (≥99% SiC, lower Fe) over black SiC for the ceramic top-coat layer to ensure no Fe colour migration during cookware service life.

Selection Guide vs Black Silicon Carbide

Choose green SiC for: precision grinding (optical, hard-alloy, jade, gemstone); premium grinding wheels (tool steel, HSS, carbide, ceramic); semiconductor-grade wafer wire-sawing; sapphire and LED polishing; stainless-steel and titanium polishing where Fe contamination is disqualifying; cermet refractory; premium non-stick coating layer.

Choose black SiC for: cost-sensitive bulk abrasives; general-purpose grinding wheels; foundry blast; refractory aggregate; steel deoxidiser. Black at 15–25% lower per-kg cost.

The two grades are FEPA / ISO / GB grit-standard interchangeable — same particle-size codes, same LPD test methods, same chemical analysis methods (GB/T 3044-2007). Process specifications can call out either by grit number and let cost-driven supplier selection decide.

Equivalent Grades

• Saint-Gobain Sika G — European premium green SiC
• Washington Mills GC — North American premium green SiC
• Showa Denko GC# — Japanese premium green SiC, optical-grade
• Denka Performance Electronics — Japanese semiconductor-grade green SiC
• Generic Chinese green SiC — commodity grade ≥99%, Shandong / Ningxia origin